Open AccessInvestigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
Author(s) -
Volodymyr V. Basanets,
V. S. Slepokurov,
В. В. Шинкаренко,
R. Ya. Kudrik,
Ya. Ya. Kudrik
Publication year - 2015
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2015.1.33
Subject(s) - ohmic contact , electrical resistivity and conductivity , atmospheric temperature range , materials science , activation energy , diode , contact resistance , range (aeronautics) , condensed matter physics , chemistry , optoelectronics , electrical engineering , nanotechnology , composite material , thermodynamics , physics , organic chemistry , layer (electronics) , engineering
Both contact resistivity of Au—Ti—Pd—n-Si ohmic contact and mechanism of current flow are studied in the 100—360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity values (which are in the range of (0.9—2)•10–5 Ω•cm2). On the basis of the contact resistivity temperature dependence, it is found for an ohmic contact with barrier height of 0.22 eV that the field mechanism of current flow is predominant in the 100—200 K temperature range, while thermal-field emission with activation energy of 0.08 eV is predominant in the 200—360 K temperature range.