Ionization annealing of semiconductor crystals. Part one: theoretical background | Zendy

A. S. Garkavenko | Zendy; В. А. Мокрицкий | Zendy; O. V. Banzak | Zendy; V. A. Zavadskii | Zendy

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Ionization annealing of semiconductor crystals. Part one: theoretical background

Author(s) -

A. S. Garkavenko,

В. А. Мокрицкий,

O. V. Banzak,

V. A. Zavadskii

Publication year - 2014

Publication title -

technology and design in electronic equipment

Language(s) - English

Resource type - Journals

eISSN - 2309-9992

pISSN - 2225-5818

DOI - 10.15222/tkea2014.4.50

Subject(s) - annealing (glass) , semiconductor , electron , ionization , impact ionization , irradiation , materials science , ionization energy , high energy , atomic physics , optoelectronics , chemistry , physics , nuclear physics , ion , metallurgy , organic chemistry

During irradiation of semiconductor crystals with powerful (high current) pulsed high-energy electron beams, a new type of annealing has been obtained. We could obtain new results and to find out physical nature of this phenomenon due to short and powerful bunches of electrons with high energy. Given its theoretical justification, the new annealing type has been called the "ionization annealing".

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