Open AccessIonization annealing of semiconductor crystals. Part one: theoretical background
Author(s) -
А. С. Гаркавенко,
В. А. Мокрицкий,
O. V. Banzak,
V. A. Zavadskii
Publication year - 2014
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2014.4.50
Subject(s) - annealing (glass) , semiconductor , electron , ionization , impact ionization , irradiation , materials science , ionization energy , high energy , atomic physics , optoelectronics , chemistry , physics , nuclear physics , ion , metallurgy , organic chemistry
During irradiation of semiconductor crystals with powerful (high current) pulsed high-energy electron beams, a new type of annealing has been obtained. We could obtain new results and to find out physical nature of this phenomenon due to short and powerful bunches of electrons with high energy. Given its theoretical justification, the new annealing type has been called the "ionization annealing".