Open AccessFabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
Author(s) -
É. F. Venger,
P.M. Lytvyn,
Л. А. Матвеева,
V. F. Mitin,
V. V. Kholevchuk
Publication year - 2014
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2014.4.39
Subject(s) - materials science , monocrystalline silicon , thin film , fabrication , electronics , optoelectronics , dislocation , conductivity , percolation (cognitive psychology) , composite material , nanotechnology , silicon , electrical engineering , chemistry , engineering , neuroscience , biology , medicine , alternative medicine , pathology
Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is possible to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, as well as high temperature sensitivity that can be used for IR and electronics technologies.