Open AccessObtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method
Author(s) -
Н.М. Вакив,
С. І. Круковський,
В.Р. Тимчишин,
A. Vaskiv
Publication year - 2013
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2013.6.41
Subject(s) - epitaxy , materials science , silicon , tin , diode , optoelectronics , voltage , diffusion , reproducibility , high voltage , layer (electronics) , electronic engineering , electrical engineering , metallurgy , composite material , chemistry , engineering , physics , chromatography , thermodynamics
Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper a technique of growing bilateral high-voltage silicon p—i—n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5•1018 cm–3) contact layers: 0.4—0.8 at. % aluminum in gallium melt for growing p-Si-layers and 0.03—0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc.