Open AccessPhysical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system
Author(s) -
Muhammad Abbas,
Nazar Abbas Shah,
K. Jehangir,
M. A. Fareed,
Azhar A. Zaidi
Publication year - 2018
Publication title -
materials science poland
Language(s) - English
Resource type - Journals
eISSN - 2083-1331
pISSN - 2083-134X
DOI - 10.1515/msp-2018-0036
Subject(s) - materials science , crystallite , substrate (aquarium) , vacuum evaporation , electrical resistivity and conductivity , semiconductor , resistive touchscreen , evaporation , thin film , ultra high vacuum , vacuum deposition , optoelectronics , atmospheric temperature range , diffraction , analytical chemistry (journal) , nanotechnology , optics , metallurgy , chemistry , oceanography , physics , engineering , chromatography , meteorology , electrical engineering , thermodynamics , geology
Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.