Open AccessReliability studies on biaxially tensile strained-Si channel p-MOSFETs
Author(s) -
Sanghamitra Das,
T. P. Dash,
S. Dey,
Rajib Kumar Nanda,
C. K. Maiti
Publication year - 2019
Publication title -
international journal of microstructure and materials properties
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.145
H-Index - 14
eISSN - 1741-8429
pISSN - 1741-8410
DOI - 10.1504/ijmmp.2019.10019611
Subject(s) - materials science , optoelectronics , threshold voltage , heterojunction , reliability (semiconductor) , substrate (aquarium) , transistor , silicon , degradation (telecommunications) , mosfet , layer (electronics) , germanium , oxide , voltage , electronic engineering , electrical engineering , nanotechnology , engineering , power (physics) , oceanography , physics , quantum mechanics , geology , metallurgy