Open AccessOptimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors
Author(s) -
E. L. Pankratov,
E. A. Bulaeva
Publication year - 2015
Publication title -
international journal of recent advances in physics
Language(s) - English
Resource type - Journals
ISSN - 2201-1056
DOI - 10.14810/ijrap.2015.4103
Subject(s) - dopant , diffusion , ion implantation , materials science , field (mathematics) , ion , engineering physics , chemical physics , computer science , optoelectronics , doping , chemistry , thermodynamics , engineering , physics , mathematics , pure mathematics , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom