Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001) | Zendy

P. G. Gucciardi | Zendy; JeanChristophe Valmalette | Zendy; Maria S. Lopes | Zendy; Régis Deturche | Zendy; Marc Lamy de la Chapelle | Zendy; Dominique Barchiesi | Zendy; Francesco Bonaccorso | Zendy; Cristiano D’Andrea | Zendy; Marc Chaigneau | Zendy; Gennaro Picardi | Zendy; Razvigor Ossikovski | Zendy

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Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

Author(s) -

P. G. Gucciardi,

JeanChristophe Valmalette,

Maria S. Lopes,

Régis Deturche,

Marc Lamy de la Chapelle,

Dominique Barchiesi,

Francesco Bonaccorso,

Cristiano D’Andrea,

Marc Chaigneau,

Gennaro Picardi,

Razvigor Ossikovski

Publication year - 2011

Publication title -

doaj (doaj: directory of open access journals)

Language(s) - English

DOI - 10.1478/c1v89s1p042

Subject(s) - gallium arsenide , depolarization , raman spectroscopy , materials science , optoelectronics , silicon , spectroscopy , optics , biophysics , physics , biology , quantum mechanics

We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation field depolarization induces a selective enhancement of specific Raman modes, depending on their Raman tensor symmetry. A complete polarization analysis of the light backscattered from the tip confirms the TERS findings. The spatial confinement of the depolarization field is studied and its dependence on the excitation wavelength and power are explored

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