Open AccessContact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers
Author(s) -
Faten Adel Ismael Chaqmaqchee
Publication year - 2021
Publication title -
aro
Language(s) - English
Resource type - Journals
eISSN - 2410-9355
pISSN - 2307-549X
DOI - 10.14500/aro.10845
Subject(s) - materials science , optoelectronics , laser , vertical cavity surface emitting laser , optics , aperture (computer memory) , epitaxy , quantum well , layer (electronics) , physics , acoustics , composite material
Geometrical contacts of a double mesa structure with 16 rows ×15 columns arrays of top emitting GaAs based 980 nm vertical cavity surface emitting lasers (VCSELs) are fabricated and characterized. In this paper, 5 strained In0.22Ga0.78As/Ga0.9AsP0.1 quantum wells (QWs) within λ/2 thick cavity have been employed. The top and the bottom epitaxially grown mirrors are based on the linear graded Al0.9Ga0.1As/GaAs distributed Bragg reflectors (DBRs) with 20.5 and 37 periods, respectively. Static parameters including threshold currents, rollover currents, maximum optical output power and wall-plug efficiency are extracted from light out power-current-voltage (LIV) of VCSELs with fixed oxide aperture diameter of ∅~ 6 μm and various mesa2 diameters. In addition, spectral emission for 980 nm VCSELs of oxide aperture between ∅~ 6 and 19 μm and with fixed ∅~ 6 μm and different bias currents are analyzed. The highest optical output power of around 33 dBm is observed at bias current of 0.8 mA for short−reach optical interconnect applications.