Open AccessForward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics
Author(s) -
S. B. Rybalka,
E.Yu. Krayushkina,
A.M. Demidov,
Olga A. Shishkina,
B.P. Surin
Publication year - 2017
Publication title -
international journal of physical research
Language(s) - English
Resource type - Journals
ISSN - 2307-9010
DOI - 10.14419/ijpr.v5i1.7065
Subject(s) - silicon carbide , schottky diode , power electronics , materials science , diode , optoelectronics , current (fluid) , electronics , power semiconductor device , electrical engineering , voltage , engineering physics , power (physics) , metal–semiconductor junction , electronic engineering , engineering , physics , quantum mechanics , metallurgy
Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n»1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.