Open AccessPhysical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering
Author(s) -
Д. А. Голосов,
Sergey M. Zavatskiy,
Sergey N. Melnikov
Publication year - 2013
Publication title -
acta polytechnica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.207
H-Index - 15
eISSN - 1805-2363
pISSN - 1210-2709
DOI - 10.14311/1743
Subject(s) - yttria stabilized zirconia , materials science , cubic zirconia , electrical resistivity and conductivity , sputter deposition , cavity magnetron , amorphous solid , annealing (glass) , thin film , atmospheric temperature range , analytical chemistry (journal) , composite material , sputtering , nanotechnology , crystallography , electrical engineering , ceramic , chemistry , physics , chromatography , meteorology , engineering
This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C.