Open AccessNonlinear Quantum Phenomena During the Polarization of Nanometer Layers of Proton Semiconductors and Dielectrics
Author(s) -
В. А. Калытка
Publication year - 2021
Publication title -
izvestiâ altajskogo gosudarstvennogo universiteta
Language(s) - English
Resource type - Journals
eISSN - 1561-9451
pISSN - 1561-9443
DOI - 10.14258/izvasu(2021)4-05
Subject(s) - dielectric , quantum tunnelling , degenerate energy levels , ion , proton , atomic physics , polarization (electrochemistry) , quantum , semiconductor , condensed matter physics , materials science , molecular physics , physics , chemistry , optoelectronics , quantum mechanics
This paper investigates the influence of the structure and parameters of the degenerate quasi-discrete energy spectrum of relaxers (protons) on the mechanism of nonlinear quantum diffusion polarization in nanoscale layers of hydrogen bonded crystals (HBC) in a wide range of parameters of fields (100 kV/m - 1000 MV/m) and temperatures (0-1550 K). The temperature dependence of the quantum transparency of the parabolic potential barrier for protons in HBC is calculated using the Gibbs quantum canonical distribution for the ensemble of non-interacting protons (ideal proton gas balanced with the ions of anion sub-lattice) moving in an onedimensional potential field of a crystalline lattice (in the field of hydrogen bonds) with a zone structure distributed by energy levels. The influence of "zero" oscillations of protons on the temperature dependences of the proton subsystem kinetic coefficients in HBC is considered. It is revealed that proton tunneling influences the nonlinear space-charge polarization kinetics in HBC at high (150-550 K) and ultrahigh (550-1550 K) temperatures when crystalline layer thickness ranges from 1 to 10 nm. The results of theoretical studies (based on earlier experiments) are bound to be prospective for the prediction of HBC-class (KDP, DKDP) ferroelectrics properties, studying the second-order nonlinear optical effects of femtosecond lasers, and the development of memory cells for non-volatile high-speed memory devices.