Open Accessダイヤモンド高周波・パワーデバイス応用に向けた金属‐酸化膜‐半導体（MOS）界面の現状と課題
Author(s) -
Tetsuya Matsumoto,
Xufang Zhang,
Norio Tokuda
Publication year - 2021
Publication title -
hyomen to shinku
Language(s) - English
Resource type - Journals
eISSN - 2433-5843
pISSN - 2433-5835
DOI - 10.1380/vss.64.80
Subject(s) - diamond , materials science , optoelectronics , capacitor , valence band , enhanced data rates for gsm evolution , semiconductor , transistor , electron mobility , band gap , field effect transistor , engineering physics , electrical engineering , composite material , voltage , physics , computer science , telecommunications , engineering