Open AccessRecent Progress and Issues of Diamond Metal-oxide-semiconductor (MOS) Interface for High-Frequency and Power Device Application
Author(s) -
Tsubasa Matsumoto,
Xufang Zhang,
Norio Tokuda
Publication year - 2021
Publication title -
vacuum and surface science
Language(s) - English
Resource type - Journals
eISSN - 2433-5843
pISSN - 2433-5835
DOI - 10.1380/vss.64.80
Subject(s) - diamond , materials science , optoelectronics , semiconductor , capacitor , transistor , wide bandgap semiconductor , enhanced data rates for gsm evolution , field effect transistor , mosfet , band gap , quantum tunnelling , engineering physics , electrical engineering , composite material , voltage , computer science , engineering , telecommunications
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