Open AccessLow-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
Author(s) -
Satoru Yoshimura,
Satoshi Sugimoto,
Takae Takeuchi,
Kensuke Murai,
Masato Kiuchi
Publication year - 2021
Publication title -
plos one
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.99
H-Index - 332
ISSN - 1932-6203
DOI - 10.1371/journal.pone.0259216
Subject(s) - x ray photoelectron spectroscopy , ion beam assisted deposition , ion beam , fourier transform infrared spectroscopy , chemical vapor deposition , analytical chemistry (journal) , ion beam deposition , materials science , silicon , substrate (aquarium) , thin film , ion beam mixing , ion , chemistry , nanotechnology , chemical engineering , optoelectronics , organic chemistry , oceanography , geology , engineering
We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar + and N + as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar + ions were injected in conjunction with HMDS. On the other hand, in the cases of N + ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.