Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals

The ternary chalcogenide Cu 3 VSe 4 (CVSe) with sulvanite structure has been theoretically predicted to be a promising candidate for photovoltaic applications due to its suitable bandgap for solar absorption and the relatively earth-abundant elements in its composition. To realize the absorber layer via an inexpensive route, printed thin-films could be fabricated from dispersions of nano-sized Cu 3 VSe 4 precursors. Herein, cubic Cu 3 VSe 4 nanocrystals were successfully synthesized via a hot-injection method. Similar with reported Cu 3 VS 4 nanocrystals, Cu 3 VSe 4 nanocrystals with cubic structure exhibit three absorption bands in the UV-Visible range indicative of a potential intermediate bandgap existence. A thin film fabricated by depositing the nanoparticles Cu 3 VSe 4 on FTO coated glass substrate, exhibited a p-type behavior and a photocurrent of ~ 4 μA/cm 2 when measured in an electrochemical cell setting. This first demonstration of photocurrent exhibited by a CVSe nanocrystals thin film signifies a promising potential in photovoltaic applications.