Open AccessPermanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching
Author(s) -
Adolfo Henrique Nunes Melo,
M.A. Macêdo
Publication year - 2016
Publication title -
plos one
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.99
H-Index - 332
ISSN - 1932-6203
DOI - 10.1371/journal.pone.0168515
Subject(s) - resistive random access memory , resistive touchscreen , optoelectronics , materials science , sputter deposition , thin film , non volatile memory , high resistance , sputtering , nanotechnology , voltage , computer science , electrical engineering , engineering , agronomy , computer vision , biology
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with R HRS / R LRS = 5.2 × 10 11 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 10 4 s, indicating that the devices have excellent applicability in NRRMs.