Open AccessImplementing a Raman silicon nanocavity laser for integrated optical circuits by using a (100) SOI wafer with a 45-degree-rotated top silicon layer
Author(s) -
Yukiko Yamauchi,
Makoto Okano,
Hiroaki Shishido,
Susumu Noda,
Yasushi Takahashi
Publication year - 2019
Publication title -
osa continuum
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.592
H-Index - 8
ISSN - 2578-7519
DOI - 10.1364/osac.2.002098
Subject(s) - silicon on insulator , wafer , silicon , materials science , optoelectronics , hybrid silicon laser , layer (electronics) , degree (music) , laser , integrated circuit , raman spectroscopy , electronic circuit , optics , electrical engineering , nanotechnology , engineering , physics , acoustics