Open AccessImplementing a Raman silicon nanocavity laser for integrated optical circuits by using a (100) SOI wafer with a 45-degree-rotated top silicon layer
Author(s) -
Yukiko Yamauchi,
Makoto Okano,
Hiroaki Shishido,
Susumu Noda,
Yasushi Takahashi
Publication year - 2019
Publication title -
osa continuum
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.592
H-Index - 8
ISSN - 2578-7519
DOI - 10.1364/osac.2.002098
Subject(s) - silicon on insulator , materials science , wafer , optoelectronics , laser , silicon , photonic crystal , raman spectroscopy , silicon photonics , hybrid silicon laser , substrate (aquarium) , photonic integrated circuit , optics , photonics , raman amplification , raman scattering , physics , oceanography , geology
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