Open AccessEfficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells
Author(s) -
Chi-Ming Tsai,
Chia-Sheng Chang,
Zhibo Xu,
WenPin Huang,
WeiChih Lai,
Jong-Shing Bow
Publication year - 2019
Publication title -
osa continuum
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.592
H-Index - 8
ISSN - 2578-7519
DOI - 10.1364/osac.2.001207
Subject(s) - materials science , light emitting diode , optoelectronics , gallium nitride , nitride , indium gallium nitride , quantum well , wide bandgap semiconductor , diode , quantum efficiency , thin film , indium , barrier layer , layer (electronics) , optics , composite material , nanotechnology , laser , physics
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