Open AccessEfficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells
Author(s) -
Chi Ming Tsai,
Chin Sung Chang,
Zhibo Xu,
William J. Huang,
Wei Chih Lai,
Jong Shing Bow
Publication year - 2019
Publication title -
osa continuum
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.592
H-Index - 8
ISSN - 2578-7519
DOI - 10.1364/osac.2.001207
Subject(s) - optoelectronics , materials science , light emitting diode , nitride , diode , gallium nitride , quantum well , strain (injury) , wide bandgap semiconductor , quantum efficiency , optics , nanotechnology , laser , layer (electronics) , physics , medicine