Recent progress in improving low-temperature stability of infrared thin-film interference filters | Zendy

Bo Li | Zendy; S. Y. Zhang | Zendy; Jun Jiang | Zendy; D. Q. Liu | Zendy; F. S. Zhang | Zendy

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Recent progress in improving low-temperature stability of infrared thin-film interference filters

Author(s) -

Bo Li,

S. Y. Zhang,

Jun Jiang,

D. Q. Liu,

F. S. Zhang

Publication year - 2005

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/opex.13.006376

Subject(s) - materials science , temperature coefficient , infrared , interference filter , filter (signal processing) , optics , wavelength , optical filter , interference (communication) , thin film , optoelectronics , composite material , telecommunications , nanotechnology , physics , channel (broadcasting) , computer science , computer vision

The degeneration of performance of an optical thin-film interference filter associated with the change of temperature is not acceptable. In this letter, we report a new progress in improving low-temperature performance of infrared narrow-band filters by using Pb(1-x)Ge(x)Te initial bulk alloy with appropriate Ge concentration x. It can be found that there exists a critical temperature for the investigated narrow-band filter, at which the temperature coefficient of filter is exactly zero. Therefore, by means of controlling the composition in (Pb(1-x)Ge(x))(1-y)Te(y) layers, the temperature coefficient of filter can be tunable at the designated low-temperature. In our present investigation, when temperature varies from 300 to 85 K, a shift of peak wavelength of 0.05935 nm.K-1 has been achieved.

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