Open AccessRecent progress in improving low-temperature stability of infrared thin-film interference filters
Author(s) -
B. Li,
S. Y. Zhang,
Jun Jiang,
D. Q. Liu,
F. S. Zhang
Publication year - 2005
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/opex.13.006376
Subject(s) - materials science , temperature coefficient , infrared , interference filter , filter (signal processing) , optics , wavelength , optical filter , interference (communication) , thin film , optoelectronics , composite material , telecommunications , nanotechnology , physics , channel (broadcasting) , computer science , computer vision
The degeneration of performance of an optical thin-film interference filter associated with the change of temperature is not acceptable. In this letter, we report a new progress in improving low-temperature performance of infrared narrow-band filters by using Pb(1-x)Ge(x)Te initial bulk alloy with appropriate Ge concentration x. It can be found that there exists a critical temperature for the investigated narrow-band filter, at which the temperature coefficient of filter is exactly zero. Therefore, by means of controlling the composition in (Pb(1-x)Ge(x))(1-y)Te(y) layers, the temperature coefficient of filter can be tunable at the designated low-temperature. In our present investigation, when temperature varies from 300 to 85 K, a shift of peak wavelength of 0.05935 nm.K-1 has been achieved.