Analysis of position-dependent light extraction of GaN-based LEDs | Zendy

Tsung-Xian Lee | Zendy; Chao-Ying Lin | Zendy; Shih-Hsin Ma | Zendy; Ching-Cherng Sun | Zendy

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Analysis of position-dependent light extraction of GaN-based LEDs

Author(s) -

Tsung-Xian Lee,

Chao-Ying Lin,

Shih-Hsin Ma,

Ching-Cherng Sun

Publication year - 2005

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/opex.13.004175

Subject(s) - light emitting diode , optics , materials science , ray tracing (physics) , optoelectronics , monte carlo method , sapphire , distributed ray tracing , position (finance) , gallium nitride , attenuation coefficient , integrating sphere , layer (electronics) , physics , laser , statistics , mathematics , composite material , finance , economics

The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.

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