Open AccessAnalysis of position-dependent light extraction of GaN-based LEDs
Author(s) -
Tsung Xian Lee,
Chao Ying Lin,
ShihHsin Ma,
Ching Cherng Sun
Publication year - 2005
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/opex.13.004175
Subject(s) - light emitting diode , optics , materials science , ray tracing (physics) , optoelectronics , monte carlo method , sapphire , distributed ray tracing , position (finance) , gallium nitride , attenuation coefficient , integrating sphere , layer (electronics) , physics , laser , statistics , mathematics , composite material , finance , economics
The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.