
Characterization of a highly photorefractive RF-sputtered SiO2-GeO2 waveguide
Author(s) -
S. Sebastiani,
G. Nunzi Conti,
S. Pelli,
Giancarlo C. Righini,
Alessandro Chiasera,
M. Ferrari,
C. Tosello
Publication year - 2005
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/opex.13.001696
Subject(s) - materials science , photorefractive effect , optics , refractive index , waveguide , optoelectronics , laser , absorption (acoustics) , diffraction efficiency , sputter deposition , sputtering , thin film , grating , physics , nanotechnology , composite material
We present the characterization of highly photorefractive Er3+/Yb3+-doped 75SiO2-25GeO2 planar waveguides, single mode at 1550 nm, deposited by radio-frequency-magnetron-sputtering (RFMS) technique. Details of the deposition process are reported. The material presents an intense absorption band (alpha approximately 10;3/10;4 cm;-1) in the UV region. Irradiations by a KrF excimer laser source at lambda = 248 nm have produced large positive (up to 310-3) refractive index changes, without the need of particular sensitization procedures. Direct measurements of UV photo-induced volume densification demonstrates that glass compaction accounts for large part of the refractive index change. Highly efficient photo-induced phase gratings have thus been fabricated in the waveguide.