Open AccessAnalysis of Raman lasing characteristics in silicon-on-insulator waveguides
Author(s) -
Michael Krause,
Hagen Renner,
E. Brinkmeyer
Publication year - 2004
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/opex.12.005703
Subject(s) - lasing threshold , silicon on insulator , materials science , raman amplification , optics , laser , raman laser , optoelectronics , absorption (acoustics) , raman spectroscopy , silicon , raman scattering , free carrier absorption , photonics , photon , physics , composite material
Numerical analysis predicts that continuous-wave Raman lasing is possible in silicon-on-insulator (SOI) waveguides, in spite of the detrimental presence of two-photon absorption and free-carrier absorption. We discuss in particular the dependence of the lasing characteristics of SOI Raman lasers on the effective lifetime of the free carriers generated by two-photon absorption. It is shown that the pump-power-dependent cavity losses lead to a rollover of the output-power characteristics at a certain pump-power level and that there exists an upper shutdown threshold at which the laser operation breaks down.