Open AccessInAs quantum-dot laser utilizing GaAs photonic-crystal line-defect waveguide
Author(s) -
Kyo Inoue,
Hisashi Sasaki,
Kōji Ishida,
Yoshimasa Sugimoto,
Naoki Ikeda,
Yu Tao,
Shunsuke Ohkouchi,
Y. Nakamura,
Kiyoshi Asakawa
Publication year - 2004
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/opex.12.005502
Subject(s) - lasing threshold , optics , photonic crystal , optoelectronics , materials science , laser , waveguide , photonic integrated circuit , quantum dot , ultrashort pulse , wavelength , physics
We have observed laser action from optically-pumped InAs-quantum-dots embedded in a line-defect waveguide in an air-bridge type GaAs-photonic-crystal slab (an array of air-holes). The lasing is found to occur without any optical cavity such as a set of Fabry-Perot mirrors. Comparison of the observed transmittance spectrum with the calculated band dispersion of the W3 defect-mode enables us to specify the lasing wavelength as that at the band edge. From this fact it follows that distributed feedback mechanism at the band edge with a vanishingly small group-velocity should be responsible for the present lasing. Usefulness of this kind of compact laser in a future ultrafast planar photonic integrated circuit is discussed.