Open AccessNet optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering
Author(s) -
Ansheng Liu,
Haisheng Rong,
Mario Paniccia,
Oded Cohen,
Dani Hak
Publication year - 2004
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/opex.12.004261
Subject(s) - silicon on insulator , materials science , waveguide , raman scattering , optics , silicon , silicon photonics , optoelectronics , raman amplification , net gain , raman spectroscopy , amplifier , physics , cmos
We observe for the first time net optical gain in a low loss silicon waveguide in silicon-on-insulator (SOI) based on stimulated Raman scattering with a pulsed pump laser at 1.545 microm. We show that pulsed pumping with a pulse width narrower than the carrier recombination lifetime in SOI significantly reduces the free carrier generation rate due to two-photon absorption (TPA) in silicon. For a 4.8 cm long waveguide with an effective core area of ~1.57 microm2, we obtained a net gain of 2 dB with a pump pulse width of ~17 ns and a peak pump power of ~470 mW inside the waveguide.