Open AccessInfluence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells
Author(s) -
Feng Liang,
Degang Zhao,
Desheng Jiang,
Zongshun Liu,
Jianjun Zhu,
Ping Chen,
H. J. Yang,
Liqun Zhang
Publication year - 2019
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.9.003941
Subject(s) - indium , photoluminescence , materials science , quantum well , optoelectronics , luminescence , indium gallium nitride , light emitting diode , laser , optics , physics
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