GaN quality evolution according to carrier gas for the nucleation layer and buffer layer
Author(s) -
Wen Li,
Shengrui Xu,
Yachao Zhang,
Ruoshi Peng,
Jinjuan Du,
Ying Zhao,
Xiaomeng Fan,
Jincheng Zhang,
Hongchang Tao,
Xuewei Wang,
Yue Hao
Publication year - 2019
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.9.001945
Subject(s) - materials science , nucleation , photoluminescence , dislocation , layer (electronics) , buffer (optical fiber) , optoelectronics , crystal (programming language) , nanotechnology , composite material , chemistry , telecommunications , organic chemistry , computer science , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom