Open AccessBiaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well
Author(s) -
ChungYi Lin,
Hung-Yu Ye,
Fang-Liang Lu,
Huang-Siang Lan,
C. W. Liu
Publication year - 2018
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.8.002795
Subject(s) - photoluminescence , materials science , pseudopotential , substrate (aquarium) , chemical vapor deposition , strain (injury) , optoelectronics , band gap , quantum well , germanium , quantum dot , molecular physics , condensed matter physics , optics , silicon , chemistry , laser , physics , medicine , oceanography , geology
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