Open AccessStrain-related recombination mechanisms in polar InGaN/GaN MQWs on amorphous SixC1-x buffers
Author(s) -
Tao Lin,
Fangze Wang,
ChihHsien Cheng,
Shuai Chen,
Zhe Chuan Feng,
GongRu Lin
Publication year - 2018
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.8.001100
Subject(s) - recombination , materials science , strain (injury) , optoelectronics , exciton , light emitting diode , quantum well , amorphous solid , wide bandgap semiconductor , photoluminescence , polar , spontaneous emission , non radiative recombination , quantum efficiency , condensed matter physics , semiconductor , optics , physics , crystallography , semiconductor materials , chemistry , laser , biology , gene , astronomy , anatomy , biochemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom