Open AccessSelective area formation of arsenic oxide-rich octahedral microcrystals during photochemical etching of n-type GaAs
Author(s) -
Aditi Udupa,
Xin Yu,
Lonna Edwards,
Lynford L. Goddard
Publication year - 2018
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.8.000289
Subject(s) - materials science , wafer , etching (microfabrication) , microcrystalline , arsenic , octahedron , substrate (aquarium) , crystal (programming language) , oxide , masking (illustration) , crystal structure , photochemistry , optoelectronics , crystallography , nanotechnology , chemistry , metallurgy , geology , layer (electronics) , art , oceanography , computer science , programming language , visual arts
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