Open AccessEmission enhancement and its mechanism of Eu-doped GaN by strain engineering
Author(s) -
Tomohiro Inaba,
Brandon Mitchell,
Atsushi Koizumi,
Yasufumi Fujiwara
Publication year - 2017
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.7.001381
Subject(s) - materials science , light emitting diode , luminescence , doping , optoelectronics , strain (injury) , emission intensity , ion , diode , photoluminescence , wide bandgap semiconductor , chemistry , medicine , organic chemistry
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