Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates | Zendy

Youssef El Gmili | Zendy; P. L. Bonanno | Zendy; Suresh Sundaram | Zendy; Xiaojian Li | Zendy; Renaud Puybaret | Zendy; G. Patriarche | Zendy; Cédric Pradalier | Zendy; J. Décobert | Zendy; Paul L. Voss | Zendy; JeanPaul Salvestrini | Zendy; A. Ougazzaden | Zendy

Open Access

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Author(s) -

Youssef El Gmili,

P. L. Bonanno,

Suresh Sundaram,

Xiaojian Li,

Renaud Puybaret,

G. Patriarche,

Cédric Pradalier,

J. Décobert,

Paul L. Voss,

JeanPaul Salvestrini,

A. Ougazzaden

Publication year - 2017

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.7.000376

Subject(s) - indium , metalorganic vapour phase epitaxy , materials science , chemical vapor deposition , diffusion , growth rate , phase (matter) , analytical chemistry (journal) , optoelectronics , nanotechnology , epitaxy , layer (electronics) , chemistry , physics , geometry , mathematics , organic chemistry , chromatography , thermodynamics

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