Open AccessMask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates
Author(s) -
Youssef El Gmili,
P. L. Bonanno,
S. Sundaram,
Xiaojian Li,
Renaud Puybaret,
G. Patriarche,
Cédric Pradalier,
J. Décobert,
Paul L. Voss,
Jean Paul Salvestrini,
A. Ougazzaden
Publication year - 2017
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.7.000376
Subject(s) - indium , metalorganic vapour phase epitaxy , materials science , chemical vapor deposition , diffusion , growth rate , phase (matter) , analytical chemistry (journal) , optoelectronics , nanotechnology , epitaxy , layer (electronics) , chemistry , physics , geometry , mathematics , organic chemistry , chromatography , thermodynamics