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Properties of near-field photoluminescence in green emitting single and multiple semipolar (202¯1) plane InGaN/GaN quantum wells
Author(s) -
Mounir Mensi,
Daniel L. Becerra,
Ruslan Ivanov,
Saulius Marcinkevičius,
Shuji Nakamura,
Steven P. DenBaars,
James S. Speck
Publication year - 2015
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.6.000039
Subject(s) - photoluminescence , materials science , optoelectronics , quantum well , light emitting diode , wide bandgap semiconductor , field (mathematics) , gallium nitride , optics , nanotechnology , physics , laser , mathematics , pure mathematics , layer (electronics)

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