z-logo
open-access-imgOpen Access
Effects of the polarization field on optical transitions and selection rules in Er doped GaN
Author(s) -
Y. Q. Yan,
Jing Li,
J. Y. Lin,
H. X. Jiang
Publication year - 2022
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.448156
Subject(s) - materials science , wurtzite crystal structure , lasing threshold , photoluminescence , optoelectronics , polarization (electrochemistry) , doping , stark effect , spectroscopy , erbium , gallium nitride , optics , electric field , nanotechnology , chemistry , physics , wavelength , quantum mechanics , layer (electronics) , zinc , metallurgy

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom