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Effects of the polarization field on optical transitions and selection rules in Er doped GaN
Author(s) -
Y. Q. Yan,
Jing Li,
J. Y. Lin,
Hongxing Jiang
Publication year - 2022
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.448156
Subject(s) - materials science , lasing threshold , wurtzite crystal structure , photoluminescence , polarization (electrochemistry) , optoelectronics , doping , stark effect , spectroscopy , erbium , gallium nitride , optics , electric field , nanotechnology , chemistry , physics , wavelength , quantum mechanics , layer (electronics) , zinc , metallurgy

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