z-logo
open-access-imgOpen Access
Integrated fabrication of a high strain InGaAs/GaAs quantum well structure under variable temperature and improvement of properties using MOCVD technology
Author(s) -
Quhui Wang,
Haizhu Wang,
Bin Zhang,
Xu Wang,
Weichao Liu,
Jiabin Wang,
Jiao Wang,
Jie Fan,
Yonggang Zou,
Xiaohui Ma
Publication year - 2021
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.431015
Subject(s) - metalorganic vapour phase epitaxy , materials science , photoluminescence , optoelectronics , chemical vapor deposition , indium gallium arsenide , indium , annealing (glass) , gallium arsenide , quantum well , wafer , fabrication , layer (electronics) , nanotechnology , optics , laser , epitaxy , composite material , medicine , alternative medicine , pathology , physics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom