Open AccessInfluence of low-temperature GaN-Cap layer thickness on the InGaN/GaN multiple quantum well structure and its luminescence
Author(s) -
Yun Zhao,
Guanghui Li,
Shuai Zhang,
Feng Liang,
Mi Zhou,
Degang Zhao,
Desheng Jiang
Publication year - 2021
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.420877
Subject(s) - materials science , optoelectronics , indium , luminescence , quantum well , layer (electronics) , indium gallium nitride , quantum efficiency , wide bandgap semiconductor , gallium nitride , optics , composite material , laser , physics