Increased shell thickness in indium phosphide multishell quantum dots leading to efficiency and stability enhancement in light-emitting diodes | Zendy

Yohan Kim | Zendy; Christian Ippen | Zendy; Tonino Greco | Zendy; Jeongno Lee | Zendy; Min Suk Oh | Zendy; Chul Jong Han | Zendy; Armin Wedel | Zendy; Jiwan Kim | Zendy

Open Access

Increased shell thickness in indium phosphide multishell quantum dots leading to efficiency and stability enhancement in light-emitting diodes

Author(s) -

Yohan Kim,

Christian Ippen,

Tonino Greco,

Jeongno Lee,

Min Suk Oh,

Chul Jong Han,

Armin Wedel,

Jiwan Kim

Publication year - 2014

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.4.001436

Subject(s) - quantum dot , indium phosphide , materials science , optoelectronics , light emitting diode , indium , diode , luminance , luminescence , quenching (fluorescence) , electroluminescence , quantum efficiency , optics , gallium arsenide , nanotechnology , fluorescence , physics , layer (electronics)

We report efficient indium phosphide (InP) quantum dot-based light-emitting diodes (QD-LEDs). The current efficiency and the device stability of QD-LEDs were enhanced by increasing the thickness of ZnS outer shell of InP/ZnSe/ZnS multishell QDs. Reversible luminance degradation was observed in operation of QD-LEDs, which was hypothesized to result from QD charging. QDs having thicker ZnS shell with strong confinement suppressed the luminescence quenching as well as QD charging. Our findings about the reversible QD charging and the developed performance by the thick ZnS outer shell would help to rationalize the luminance quenching issue in QD-LED operation

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