Open AccessPatterned sapphire substrates cause a wavelength shift of green InGaN light-emitting diodes
Author(s) -
Haoyang Wu,
Shengrui Xu,
Li Feng,
Wei Mao,
Hongchang Tao,
Yuan Gao,
Yuzhi Huang,
Xuewei Wang,
Wen Li,
Huake Su,
Jincheng Zhang,
Yue Hao
Publication year - 2020
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.397534
Subject(s) - materials science , optoelectronics , sapphire , light emitting diode , electroluminescence , photoluminescence , substrate (aquarium) , wavelength , planar , diffraction , diode , layer (electronics) , indium gallium nitride , optics , gallium nitride , laser , composite material , oceanography , physics , computer graphics (images) , computer science , geology