Open AccessEpitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate
Author(s) -
Jieyin Zhang,
Wenqi Wei,
JianHuan Wang,
Hui Cong,
Qi Feng,
Zihao Wang,
Ting Wang,
Jianjun Zhang
Publication year - 2020
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.383742
Subject(s) - materials science , epitaxy , molecular beam epitaxy , optoelectronics , photoluminescence , substrate (aquarium) , quantum dot , silicon , dislocation , gallium arsenide , layer (electronics) , nanotechnology , composite material , oceanography , geology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom