Open AccessEnlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant
Author(s) -
Dongxia Wei,
Scott J. Maddox,
Patrick Sohr,
Seth R. Bank,
Stephanie Law
Publication year - 2020
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.383260
Subject(s) - materials science , dopant , molecular beam epitaxy , silicon , bismuth , doping , optoelectronics , substrate (aquarium) , semiconductor , plasmon , surface roughness , nanotechnology , epitaxy , layer (electronics) , composite material , metallurgy , oceanography , geology