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Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions
Author(s) -
Sanna Ranta,
Miki Tavast,
Tomi Lein,
R. J. Epstein,
Mircea Guină
Publication year - 2012
Publication title -
optical materials express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.925
H-Index - 66
ISSN - 2159-3930
DOI - 10.1364/ome.2.001011
Subject(s) - laser linewidth , materials science , optoelectronics , molecular beam epitaxy , optics , quantum well , laser , lithium triborate , gallium arsenide , epitaxy , second harmonic generation , physics , layer (electronics) , composite material

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