Persistent phosphorescence in Ce-doped Lu_2SiO_5 | Zendy

Mitsuo Yamaga | Zendy; Yusuke Ohsumi | Zendy; Tomomi Nakayama | Zendy; T.P.J. Han | Zendy

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Persistent phosphorescence in Ce-doped Lu_2SiO_5

Author(s) -

Mitsuo Yamaga,

Yusuke Ohsumi,

Tomomi Nakayama,

T.P.J. Han

Publication year - 2012

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.2.000413

Subject(s) - phosphorescence , scintillator , afterglow , materials science , doping , luminescence , persistent luminescence , crystal (programming language) , ion , optoelectronics , phosphor , yield (engineering) , optics , photochemistry , thermoluminescence , fluorescence , chemistry , physics , detector , gamma ray burst , organic chemistry , astronomy , computer science , metallurgy , programming language

Oxide crystals doped with Ce3+ are useful in areas such as scintillators and passive optical sources. Scintillator materials require high light-yield and fast luminescence decay time. However, when the crystalline quality is degraded by defects created during the crystal growth process, afterglow from the crystals is observed. The persistent phosphorescence observed in Lu2SiO5 doped with Ce3+ ions has been investigated in detail and a model is proposed to explain the mechanism responsible for the phosphorescence

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