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Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform
Author(s) -
Yi Sun,
Walter Shin,
David Arto Laleyan,
Ping Wang,
Ayush Pandey,
Xianhe Liu,
Yuanpeng Wu,
Mohammad Soltani
Publication year - 2019
Publication title -
optics letters/optics index
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.44.005679
Subject(s) - sapphire , resonator , materials science , optics , optoelectronics , nitride , refractive index , photonic crystal , aluminium , laser , nanotechnology , physics , layer (electronics) , metallurgy
Aluminum-nitride-on-sapphire has recently emerged as a novel low-loss photonics platform for a variety of on-chip electro-optics as well as linear and nonlinear optics applications. In this Letter, we demonstrate ultrahigh quality factor (Q int ) microring resonators using single-crystal aluminum nitride grown on a sapphire substrate with an optimized design and fabrication process. A record high intrinsic Q int up to 2.8×10 6 at the wavelength of 1550 nm is achieved with a fully etched structure, indicating a low propagation loss less than 0.13 dB/cm. Such high Q int aluminum-nitride-on-sapphire resonators with their wide bandgap and electro-optical and nonlinear optical properties is promising for a wide range of low-power and high-power compact on-chip applications over a broad spectral range.

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