Open AccessLow loss (Al)GaAs on an insulator waveguide platform
Author(s) -
Lin Chang,
Andreas Boes,
Paolo Pintus,
Xie Wang,
Jonathan Peters,
M. John Kennedy,
Warren Jin,
Xiaowen Guo,
SuPeng Yu,
Scott B. Papp,
John E. Bowers
Publication year - 2019
Publication title -
optics letters/optics index
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.44.004075
Subject(s) - gallium arsenide , photonics , resonator , optoelectronics , photonic integrated circuit , insulator (electricity) , materials science , silicon on insulator , integrated optics , waveguide , integrated circuit , optics , silicon , physics
In this Letter, we demonstrate a low loss gallium arsenide and aluminum gallium arsenide on an insulator platform by heterogenous integration. The resonators on this platform exhibit record high quality factors up to 1.5×10 6 , corresponding to a propagation loss ∼0.4 dB/cm. For the first time, to the best of our knowledge, the loss of integrated III-V semiconductor on insulator waveguides becomes comparable with that of the silicon-on-insulator waveguides. This Letter should have a significant impact on photonic integrated circuits (PICs) and become an essential building block for the evolving nonlinear PICs and integrated quantum photonic systems in the future.