Open AccessLasing action in low-resistance nanolasers based on tunnel junctions
Author(s) -
Chengcheng Fang,
Si Pan,
Felipe Vallini,
Antti Tukiainen,
Jari Lyytikäinen,
Gustav Nylund,
Boubacar Kanté,
Mircea Guina,
Abdelkrim El Amili,
Yeshaiahu Fainman
Publication year - 2019
Publication title -
optics letters/optics index
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.44.003669
Subject(s) - nanolaser , lasing threshold , materials science , optoelectronics , diode , optics , tunnel junction , physics , wavelength , quantum tunnelling
We experimentally demonstrate the lasing action of a new nanolaser design with a tunnel junction. By using a heavily doped tunnel junction for hole injection, we can replace the p-type contact material of a conventional nanolaser diode with a low-resistance n-type contact layer. This leads to a significant reduction of the device resistance and lowers the threshold voltage from 5 V to around 0.95 V at 77 K. The lasing behavior is verified by the light output versus the injection current (L-I) characterization and second-order coherence function measurements. Because of less Joule heating during current injection, the nanolaser can be operated at temperatures as high as 180 K under CW pumping. The incorporation of heavily doped tunnel junctions may pave the way for other nanoscale cavity design for improved heat management.