32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon | Zendy

Bassem Tossoun | Zendy; Géza Kurczveil | Zendy; Sudharsanan Srinivasan | Zendy; Antoine Descos | Zendy; Di Liang | Zendy; Raymond G. Beausoleil | Zendy

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32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

Author(s) -

Bassem Tossoun,

Géza Kurczveil,

Sudharsanan Srinivasan,

Antoine Descos,

Di Liang,

Raymond G. Beausoleil

Publication year - 2021

Publication title -

optics letters

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.524

H-Index - 272

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.433654

Subject(s) - avalanche photodiode , optics , waveguide , optoelectronics , quantum dot , materials science , photodiode , silicon , physics , detector

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at -1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

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