Open AccessReduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors
Author(s) -
J. Pohl,
Garrett D. Cole,
U. Zeimer,
Markus Aspelmeyer,
Markus Weyers
Publication year - 2018
Publication title -
optics letters/optics index
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.43.003522
Subject(s) - finesse , materials science , metalorganic vapour phase epitaxy , distributed bragg reflector , epitaxy , optoelectronics , absorption (acoustics) , optics , molecular beam epitaxy , carbon fibers , gallium arsenide , layer (electronics) , nanotechnology , wavelength , physics , fabry–pérot interferometer , composite number , composite material
Residual p-type doping from carbon has been identified as the root cause of excess absorption losses in (Al)GaAs/AlGaAs Bragg mirrors for high-finesse optical cavities when grown by metalorganic vapor phase epitaxy (MOVPE). Through optimization of the growth parameters with the aim of realizing low carbon uptake, we have shown a path for decreasing the parasitic background absorption in these mirrors from 100 to the 10 ppm range near 1064 nm. This significant reduction is realized via compensation of the carbon acceptors by intentional doping with the donor silicon in the uppermost layer pairs of 40-period GaAs/AlGaAs Bragg mirrors. Thus, we find that such compensation enables MOVPE-derived multilayer mirrors with the potential for a high cavity finesse (>100,000 in the near infrared) approaching the performance levels found with Bragg mirrors grown by molecular beam epitaxy (MBE).