Open AccessPlanar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics
Author(s) -
Chen-Yang Chang,
Radhika Bansal,
Kuo-Chih Lee,
Greg Sun,
Richard A. Soref,
Hung-Hsiang Cheng,
GuoEn Chang
Publication year - 2021
Publication title -
optics letters/optics index
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.427529
Subject(s) - algorithm , materials science , computer science
We report normal-incidence planar GeSn resonant-cavity-enhanced photodetectors (RCE-PDs) with a lateral p - i - n homojunction configuration on a silicon-on-insulator (SOI) platform for short-wave infrared (SWIR) integrated photonics. The buried oxide of the SOI platform and the deposited S i O 2 layer serve as the bottom and top reflectors, respectively, creating a vertical cavity for enhancing the optical responsivity. The planar p - i - n diode structure is favorable for complementary-metal-oxide-semiconductor-compatible, large-scale integration. With the bandgap reduction enabled by the 4.2% Sn incorporation into the GeSn active layer, the photodetection range extends to 1960 nm. The promising results demonstrate that the developed planar GeSn RCE-PDs are potential candidates for SWIR integrated photonics.