Open AccessStudy of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
Author(s) -
Seyed Amir Ghetmiri,
Yiyin Zhou,
Joe Margetis,
Sattar Al-Kabi,
Wei Dou,
Aboozar Mosleh,
Wei Du,
Andrian Kuchuk,
Jifeng Liu,
Greg Sun,
Richard A. Soref,
John Tolle,
Hameed A. Naseem,
Baohua Li,
Mansour Mortazavi,
Shui-Qing Yu
Publication year - 2017
Publication title -
optics letters/optics index
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.42.000387
Subject(s) - band gap , photoluminescence , materials science , optoelectronics , direct and indirect band gaps , diffraction , quantum well , electronic band structure , chemical vapor deposition , optics , laser , physics , condensed matter physics
A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.