Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics | Zendy

Seyed Amir Ghetmiri | Zendy; Yiyin Zhou | Zendy; Joe Margetis | Zendy; Sattar Al-Kabi | Zendy; Wei Dou | Zendy; Aboozar Mosleh | Zendy; Wei Du | Zendy; Andrian Kuchuk | Zendy; Jifeng Liu | Zendy; Greg Sun | Zendy; Richard Soref | Zendy; John Tolle | Zendy; Hameed A. Naseem | Zendy; Baohua Li | Zendy; Mansour Mortazavi | Zendy; Shui-Qing Yu | Zendy

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Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Author(s) -

Seyed Amir Ghetmiri,

Yiyin Zhou,

Joe Margetis,

Sattar Al-Kabi,

Wei Dou,

Aboozar Mosleh,

Wei Du,

Andrian Kuchuk,

Jifeng Liu,

Greg Sun,

Richard Soref,

John Tolle,

Hameed A. Naseem,

Baohua Li,

Mansour Mortazavi,

Shui-Qing Yu

Publication year - 2017

Publication title -

optics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.524

H-Index - 272

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.42.000387

Subject(s) - band gap , photoluminescence , materials science , optoelectronics , direct and indirect band gaps , diffraction , quantum well , electronic band structure , chemical vapor deposition , optics , laser , physics , condensed matter physics

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

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