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Injection-locked semiconductor laser-based frequency comb for modulation applications in RF analog photonics
Author(s) -
Edris Sarailou,
Peter J. Delfyett
Publication year - 2016
Publication title -
optics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.41.002990
Subject(s) - optics , frequency modulation , semiconductor laser theory , frequency comb , materials science , modulation (music) , radio frequency , laser , phase modulation , injection locking , photonics , semiconductor , optoelectronics , mode locking , optical frequency comb , phase noise , physics , telecommunications , computer science , acoustics
A linearized intensity modulator for periodic and pulsed light is proposed and demonstrated. The free carrier plasma effect has been used to modulate the refractive index of the phase section of a three-section mode-locked laser. If injection locked, the modulation induces an arcsine phase response on the three-section mode-locked laser. By introducing this mode-locked laser into a Mach-Zehnder interferometer biased at quadrature, one can realize a true linear intensity modulation. This novel laser suppresses any unwanted amplitude modulation and increases the performance of the linearized intensity modulator. Experimental results have provided a record low static I π of 0.39 mA and a spur-free dynamic range of 75  dB.Hz 2/3 .

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