Open AccessMid-infrared frequency doubling using strip-loaded silicon nitride on epitaxial barium titanate thin film waveguides
Author(s) -
Junchao Zhou,
Mingzhao Liu,
Ming Lu,
Pao Tai Lin
Publication year - 2020
Publication title -
optics letters/optics index
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.403760
Subject(s) - materials science , optics , barium titanate , thin film , silicon , silicon nitride , optoelectronics , infrared , epitaxy , refractive index , nanotechnology , layer (electronics) , physics , dielectric
Broadband mid-infrared (mid-IR) frequency doubling was demonstrated using nonlinear barium titanate (BTO) thin films. The device has a strip-loaded waveguide structure consisting of top silicon nitride (SiN) strips and an underneath BTO guiding layer. The epitaxial BTO was deposited on a strontium titanate (STO) substrate by pulsed-laser deposition. Through a SiN grating coupler, the pumping mid-IR light at wavelength λ =3.30-3.45µ m was coupled into the nonlinear BTO layer, where the spectrum of the near-infrared (NIR) second-harmonic generation was characterized. The developed BTO waveguides provide a platform for mid-IR nonlinear integrated photonics and on-chip quantum optics.